| PART |
Description |
Maker |
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IXGC16N60C2 IXGC16N60C2D1 |
HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
|
IXYS
|
| IXGM20N60A IXGM20N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGH20N60 IXGH20N60A |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IXGH10N60AU1 IXGH10N60U1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
|
IXYS Corporation
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| BUP305 BUP305D Q67040-A4225-A2 BUP305-D |
IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
